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Hummingbird Scientific in-situ sample holders enable real-time, up to atomic-resolution characterization of electronic devices and materials linking atomic structure to real-world performance. Perform multi-modal TEM, SEM, and X-ray experiments with closed-loop temperature control from −170 °C to above 1000 °C under applied bias to probe device switching behavior, interfacial dynamics, and failure at the nanoscale. Every Hummingbird holder is developed for performance, reproducibility, and ease of use. Scroll down to explore the types of experiments with electrical materials and devices made possible by these holders.
Studying catalytic mechanisms requires understanding how materials behave during reactions, where structure, chemistry, and performance continuously evolve. These processes must be observed under realistic reaction environments, while conventional electron microscopy is often limited to pre- or post-reaction analysis, making it difficult to capture these dynamic processes.
In-situ and operando TEM enable direct observation under working conditions. Hummingbird Scientific extends this capability with stable imaging across gas, liquid, and electrochemical environments, and experiments at up to 2 bar and above 1000 °C, allowing catalysts to be studied under realistic conditions with high reproducibility.
Observe catalyst restructuring, degradation, and active-site evolution during reactions under operando conditions, overcoming the limitations of post-reaction analysis and enabling direct identification of activity and deactivation mechanisms.
Correlate nanoscale structure with catalytic activity and selectivity during reactions, linking morphology, composition, and oxidation state directly to performance, which are otherwise difficult to resolve without real-time observation.
Study catalysts under controlled gas and liquid environments at elevated temperatures with stable imaging performance, ensuring behavior can be observed under realistic conditions rather than approximated.
Capture dynamic structural and chemical changes during reactions, including restructuring, phase transformations, and active-site evolution, which are often not accessible through static or ex-situ analysis.
Electrical switching behavior
Correlate structure and function
Image electrical switching dynamics in your devices and materials under applied bias in real time using Hummingbird Scientific MEMS heating + biasing sample holders.
Imaging reversible field-driven ionic transfer in bilayer switching devices
Reversible, field-driven modulation of electrical properties in Pr₀.₁Ce₀.₉O₂/La₁.₈₅Ce₀.₁₅CuO₄ (PCO/LCCO) thin-film bilayers was controlled and directly imaged in situ, revealing ionic transfer between the two solid oxide layers.
Reference: Thomas Defferriere, et al, ACS Appl. Mater. Interfaces 16, 35, 46461-46472 (2024) DOI: 10.1021/acsami.4c09826
Image copyright © 2024 American Chemical Society
Operando electron holography
Image electric fields
Create electron holograms of your electronic devices and materials under applied bias using Hummingbird Scientific electrical biasing sample holders.
Mapping electric fields and imaging ferroelectric domain switching in hafnia-zirconia devices
Internal electric fields within ferroelectric Hf0.5Zr0.5O2 /Al2O3 tunnel junctions were measured using in situ electrical biasing electron holography.
Reference: Leifeng Zhang, et al, Nat Commun 16, 11233 (2025) DOI: 10.1038/s41467-025-66807-4
Image copyright © 2025, The Author(s). Published by Springer Nature Limited. This article is licensed under CC-BY 4.0.
2D materials-based devices
Operando biasing and imaging
Perform operando testing and imaging of 2D materials-based devices using Hummingbird Scientific electrical biasing sample holders.
In-Situ TEM of an electron beam gated 2D MoS2 field-effect transistor
Electrical gating of 2D MoS2 channels was achieved using the TEM electron beam during operando biasing measurements.
Reference: Paul Masih Das & Marija Drndić, ACS Nano 14, 6, 7389-7397 (2020). DOI: 10.1021/acsnano.0c02908
Image copyright © 2020 American Chemical Society
Electron beam-induced current (EBIC) imaging
Map electrical connectivity
Directly observe the magnitude and direction of electric fields inside your electrical devices and materials using NEI and Hummingbird Scientific’s two channel STEM EBIC systems.
EBIC imaging of a hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) capacitor
In situ STEM EBIC imaging of TaN/HZO/TaN capacitors was performed to map local polarization and directly correlate electrical switching with nanoscale domain behavior.
Reference: Ho Leung Chan, et al, ACS Nano 18, 31, 20380-20388 (2024). DOI: 10.1021/acsnano.4c04526
Image copyright © 2024, The Author(s). Published by American Chemical Society. This article is licensed under CC-BY 4.0.
Site-specific probing and biasing
Make precise localized electrical contacts
Probe and bias targeted locations on your electrical devices and materials using the Hummingbird Scientific TEM biasing nanomanipulator.
Electrical switching in Ge-Te devices via site-specific probing and biasing
In situ observations revealed the nanoscale structural rearrangements, phase transitions, and electrically driven switching pathways that governed volatile-to-non-volatile behavior in Ge–Te devices.
Reference: Zihao Zhao, et al, ACS Nano 35, 23, 2423940 (2025). DOI: 10.1002/adfm.202423940
Image copyright © 2025 Wiley-VCH GmbH.
In-situ plasmon energy expansion thermometry
Map temperature changes
Simultaneously image electrical connections and perform thermal measurements on your electrical devices and materials using NEI and Hummingbird Scientific’s two channel STEM EBIC system.
In-situ testing of nanoscale thermoelectric coolers
Cooling performance of single-crystal bismuth telluride (Bi2Te3) and antimony/bismuth telluride (Sb2–xBixTe3) based thermoelectric coolers was evaluated using plasmon energy expansion thermometry (PEET) and condensation thermometry.
Reference: William A. Hubbard, et al, ACS Nano 14, 9, 11510-11517 (2020). DOI: 10.1021/acsnano.0c03958
Image copyright © 2020 American Chemical Society
Electrical switching behavior
Correlate structure and function
Image electrical switching dynamics in your devices and materials under applied bias in real time using Hummingbird Scientific MEMS heating + biasing sample holders.
Imaging reversible field-driven ionic transfer in bilayer switching devices
Reversible, field-driven modulation of electrical properties in Pr₀.₁Ce₀.₉O₂/La₁.₈₅Ce₀.₁₅CuO₄ (PCO/LCCO) thin-film bilayers was controlled and directly imaged in situ, revealing ionic transfer between the two solid oxide layers.
Reference: Thomas Defferriere, et al, ACS Appl. Mater. Interfaces 16, 35, 46461-46472 (2024) DOI: 10.1021/acsami.4c09826
Image copyright © 2024 American Chemical Society
Operando electron holography
Image electric fields
Create electron holograms of your electronic devices and materials under applied bias using Hummingbird Scientific electrical biasing sample holders.
Mapping electric fields and imaging ferroelectric domain switching in hafnia-zirconia devices
Internal electric fields within ferroelectric Hf0.5Zr0.5O2 /Al2O3 tunnel junctions were measured using in situ electrical biasing electron holography.
Reference: Leifeng Zhang, et al, Nat Commun 16, 11233 (2025) DOI: 10.1038/s41467-025-66807-4
Image copyright © 2025, The Author(s). Published by Springer Nature Limited. This article is licensed under CC-BY 4.0.
2D materials-based devices
Operando biasing and imaging
Perform operando testing and imaging of 2D materials-based devices using Hummingbird Scientific electrical biasing sample holders.
In-Situ TEM of an electron beam gated 2D MoS2 field-effect transistor
Electrical gating of 2D MoS2 channels was achieved using the TEM electron beam during operando biasing measurements.
Reference: Paul Masih Das & Marija Drndić, ACS Nano 14, 6, 7389-7397 (2020). DOI: 10.1021/acsnano.0c02908
Image copyright © 2020 American Chemical Society
Electron beam-induced current (EBIC) imaging
Map electrical connectivity
Directly observe the magnitude and direction of electric fields inside your electrical devices and materials using NEI and Hummingbird Scientific’s two channel STEM EBIC systems.
EBIC imaging of a hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) capacitor
In situ STEM EBIC imaging of TaN/HZO/TaN capacitors was performed to map local polarization and directly correlate electrical switching with nanoscale domain behavior.
Reference: Ho Leung Chan, et al, ACS Nano 18, 31, 20380-20388 (2024). DOI: 10.1021/acsnano.4c04526
Image copyright © 2024, The Author(s). Published by American Chemical Society. This article is licensed under CC-BY 4.0.
Site-specific probing and biasing
Make precise localized electrical contacts
Probe and bias targeted locations on your electrical devices and materials using the Hummingbird Scientific TEM biasing nanomanipulator.
Electrical switching in Ge-Te devices via site-specific probing and biasing
In situ observations revealed the nanoscale structural rearrangements, phase transitions, and electrically driven switching pathways that governed volatile-to-non-volatile behavior in Ge–Te devices.
Reference: Zihao Zhao, et al, ACS Nano 35, 23, 2423940 (2025). DOI: 10.1002/adfm.202423940
Image copyright © 2025 Wiley-VCH GmbH.
In-situ plasmon energy expansion thermometry
Map temperature changes
Simultaneously image electrical connections and perform thermal measurements on your electrical devices and materials using NEI and Hummingbird Scientific’s two channel STEM EBIC system.
In-situ testing of nanoscale thermoelectric coolers
Cooling performance of single-crystal bismuth telluride (Bi2Te3) and antimony/bismuth telluride (Sb2–xBixTe3) based thermoelectric coolers was evaluated using plasmon energy expansion thermometry (PEET) and condensation thermometry.
Reference: William A. Hubbard, et al, ACS Nano 14, 9, 11510-11517 (2020). DOI: 10.1021/acsnano.0c03958
Image copyright © 2020 American Chemical Society
Map temperature changes
Make precise localized electrical contacts
Map electrical connectivity
Operando biasing and imaging
Image electric fields
Correlate structure and function
Electrical switching via site-specific biasing
Electrical switching lets materials change between ON and OFF states when a voltage is applied. This simple behavior is the foundation of modern memory, where data is stored as different resistance states. Some materials switch temporarily (volatile), while others hold their state (non-volatile) for long-term storage—both behaviors are uniquely accessible in Ge–Te chalcogenides through composition tuning. The Hummingbird Scientific TEM biasing manipulator sample holder enables site-specific probing and biasing during in situ imaging, directly linking atomic-scale structural evolution to switching dynamics.
This video shows in-situ site-specific biasing of Ge–Te nanodevices with strong potential for next-generation memory. Under applied voltage, the device switches from amorphous to crystalline state. Direct visualization of these switching processes at the nanoscale can accelerate the design of faster, more reliable memory technologies.
Hummingbird Advantages
Reference: Zihao Zhao, et al, ACS Nano 35, 23, 2423940 (2025). DOI: 10.1002/adfm.202423940
Movie copyright © 2025 Wiley-VCH GmbH
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